Cree Demonstrates High Quality 150-mm Silicon Carbide Substrates
Source/Type:  LIGHTimes Online - News - Staff reports

Author: LIGHTimes News Staff

September 3, 2010... Cree of Durham, North Carolina USA, has reported a silicon carbide advance that the company says will help lead to wide scale commercialization of SiC. The company demonstrated high quality, 150-mm SiC substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material.

SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including LEDs, power switching devices and RF power transistors for wireless communications. The company contends that the significant size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.

“Cree’s achievement of 150-mm SiC substrates further demonstrates Cree’s leadership in SiC materials technology,” said Dr. Vijay Balakrishna, Cree Materials product line manager. Steve Kelley, Cree chief operating officer, added, “We expect that 150-mm substrates can reduce device cost, boost manufacturing output and expand our product range."

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