Researchers Find Nano-Patterned Silicon Substrate Gives Higher Output than Micro-Patterned Silicon
Source/Type:  LIGHTimes Online - News - Staff reports

Author: LIGHTimes News Staff

May 25, 2010... Hong Kong University and Taiwan National Chiao Tung University researchers attempted to grow (380-450nm) indium gallium nitride LEDs on Silicon, like many others have tried. Silicon is a lower cost raw material, and it has greater economies of scale in manufacturing than sapphire wafers most often used. Silicon also reportedly has a higher thermal conductivity which gives it better thermal control than sapphire. The researchers compared the use of nano-patterned silicon substrates to micropatterned silicon substrates. Results of the findings were reported in Applied Physics Letters. [Dongmei Deng et al, Appl. Phys. Lett., vol96, p201106, 2010]

The researchers previously developed micro-scale patterning using a silicon nitride (SiN) mask. They noted that while this improved the GaN layers, the SiN deposition process was found to be difficult to control in terms of thickness and surface uniformity/flatness. The researchers were tried using lithography and a self-ordering AAO process as a low-cost, high throughput alternative of creating nano-patterning.

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