NSF Awards Sensor Electronic Technologies Phase II SBIR Grant to Develop Deep UV LEDs
Source/Type:  LIGHTimes Online - News - Staff reports

Author: LIGHTimes News Staff

February 9, 2010... The National Science Foundation has awarded Sensor Electronic Technologies Inc., a Small Business Innovation Research Phase II grant develop and commercialize next-generation high-power deep ultraviolet light emitting diodes (DUV LEDs).

The DUV LEDs will be composed of high quality p-type doped AlInGaN layers via migration-enhanced metal-organic chemical vapor deposition (MEMOCVD). The NSF points out that DUV LEDs operate in the spectral region from 240 nm to 365 nm and are of great importance for medical, bio-analytical, sensing, and homeland security technologies.

According to the NSF the project aims to improve the LED efficiency and lifetime through improvements in the material quality, doping, and device design. The NSF says that these enhancements will lay the groundwork for large-scale penetration of high volume markets, such as global sanitation and disinfection.   National Science Foundation SBIR Grant Outline,

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